AustralieFrV1, Main, Exploration, bibRecord, 00C449

Effect of MeV O2+ implantation on the reactive ion etch rate of LiTaO3

Identifieur interne : 00C449 ( Main/Exploration ); précédent : 00C448; suivant : 00C450

Effect of MeV O2+ implantation on the reactive ion etch rate of LiTaO3

Auteurs : Patrick W. Leech [Australie] ; Mark C. Ridgway [Australie, France]

Source :

Nuclear Inst. and Methods in Physics Research, B [ 0168-583X ] ; 1999.

RBID : ISTEX:F963D4D5F6030DC0F643F4F32CB08AA93FE8FE2B

English descriptors

KwdEn :
- Chemical etching, Chf3, Chf3 plasmas, Elsevier science, Etching, Implantation, Leech, Linbo3, Litao3, Phys, Reactive, Ridgway, Ridgway nucl, Unimplanted litao3.
Teeft :
- Chemical etching, Chf3, Chf3 plasmas, Elsevier science, Etching, Implantation, Leech, Linbo3, Litao3, Phys, Reactive, Ridgway, Ridgway nucl, Unimplanted litao3.

Abstract

Abstract: The etch rate of LiTaO3 in CF4/CHF3 plasmas was increased by ∼50% by prior implantation with MeV O2+ ions. The etch rate of LiTaO3 was shown to increase with ion dose, indicating an effect of the implant-induced nuclear damage on the etch process. In general terms, the reactive ion etching of LiTaO3 in CF4/CHF3 plasmas has been identified as a process of ion-enhanced chemical etching.

Url:

https://api.istex.fr/document/F963D4D5F6030DC0F643F4F32CB08AA93FE8FE2B/fulltext/pdf

DOI: 10.1016/S0168-583X(99)00578-9

Affiliations:

Australie, France

Links toward previous steps (curation, corpus...)

to stream Istex, to step Corpus: 002E98
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to stream Istex, to step Checkpoint: 002111
to stream Main, to step Merge: 00D422
to stream Main, to step Curation: 00C449

Le document en format XML

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<front><div type="abstract" xml:lang="en">Abstract: The etch rate of LiTaO3 in CF4/CHF3 plasmas was increased by ∼50% by prior implantation with MeV O2+ ions. The etch rate of LiTaO3 was shown to increase with ion dose, indicating an effect of the implant-induced nuclear damage on the etch process. In general terms, the reactive ion etching of LiTaO3 in CF4/CHF3 plasmas has been identified as a process of ion-enhanced chemical etching.</div>
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Effect of MeV O2+ implantation on the reactive ion etch rate of LiTaO3

Effect of MeV O2+ implantation on the reactive ion etch rate of LiTaO3

Source :

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri